Manufacturer Part NumberFDMS1D4N03S
Manufacturer / BrandON Semiconductor
Available Quantity143740 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 30V 211A 8PQFN
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download FDMS1D4N03S.pdf

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Part Number
FDMS1D4N03S
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
211A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.09 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
65nC @ 4.5V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
10250pF @ 15V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6), Power56
Package / Case
8-PowerTDFN
Weight
Contact us
Application
Email for details
Replacement Part
FDMS1D4N03S

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