Manufacturer Part NumberIRLW630ATM
Manufacturer / BrandON Semiconductor
Available Quantity24920 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 200V 9A I2PAK
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IRLW630ATM.pdf

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Part Number
IRLW630ATM
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
400 mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27nC @ 5V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
755pF @ 25V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Weight
Contact us
Application
Email for details
Replacement Part
IRLW630ATM

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