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ON Semiconductor |
DIODE GEN PURP 650V DIE |
Active | Standard | 650V | - | 2.9V @ 25A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
Active | Standard | 1200V | - | 2.6V @ 25A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 650V DIE |
Active | Standard | 650V | - | 2.9V @ 25A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 45V 10A D2PAK |
Active | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 16A D2PAK |
Active | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
Active | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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ON Semiconductor |
650V 6A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 11A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
Active | Standard | 1200V | - | 1.8V @ 35A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
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ON Semiconductor |
UFR TO220 15A 600V AUTO |
Active | Standard | 600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
Active | Standard | 1200V | - | 1.8V @ 35A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
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ON Semiconductor |
UFR TO220 15A 1000V AUTO |
Active | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD123 |
Active | Schottky | 20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | - | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C |
|
ON Semiconductor |
650V 6A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 6A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC |
Active | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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ON Semiconductor |
650V 8A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
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ON Semiconductor |
650V 8A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 8A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV TO220-2 |
Active | Silicon Carbide Schottky | 1200V | - | 1.75V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2 | - |
|
ON Semiconductor |
DIODE SCHOTTKY 30V 40A D2PAK |
Active | Schottky | 30V | 40A | 550mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 30V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
Active | Standard | 600V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 80A TO247-2 |
Active | Standard | 1000V | 80A | 1.9V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 250µA @ 80V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
MICROSS/On Semiconductor |
DIODE GEN PURP 20V 50MA DIE |
Active | Standard | 20V | 50mA | 1.1V @ 50mA | Standard Recovery >500ns, > 200mA (Io) | 700ns | 50nA @ 20V | 1pF @ 0V, 1MHz | Surface Mount | Die | Die | 175°C (Max) |
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MICROSS/On Semiconductor |
DIE DIODE GENERAL PURPOSE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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MICROSS/On Semiconductor |
DIE DIODE GENERAL PURPOSE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
1200V 10A SIC SBD |
Active | Silicon Carbide Schottky | 1200V | 17A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
ON Semiconductor |
650V 16A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 11A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
ON Semiconductor |
650V 20A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 13A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
650V 20A SIC SBD GEN1.5 |
Active | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
650V 30A SIC SBD |
Active | Silicon Carbide Schottky | 650V | 23A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
Active | Silicon Carbide Schottky | 650V | 37A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1260pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 20A AUTO SIC SBD |
Active | Silicon Carbide Schottky | 1200V | 15A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 40A SIC SBD |
Active | Silicon Carbide Schottky | 1200V | 61A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 2250pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
ON Semiconductor |
1 CHANNEL ESD PROTECTOR |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
DIODE GEN PURP 125V 200MA DO35 |
Obsolete | Standard | 125V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 125V | 6pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 1KV 30A TO247 |
Obsolete | Standard | 1000V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 | - |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 30A TO247 |
Obsolete | Standard | 1200V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
Obsolete | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 125ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 100A TO218 |
Obsolete | Standard | 600V | 100A | 1.6V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 150A TO218 |
Obsolete | Standard | 600V | 150A | 1.6V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 80A TO218 |
Obsolete | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-218-1 | TO-218 | - |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO220-2L |
Obsolete | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 100µA @ 1200V | 30pF @ 10V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
Obsolete | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
Obsolete | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
Obsolete | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
Obsolete | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A DO41 |
Obsolete | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 800V 1A DO41 |
Obsolete | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 1KV 1A DO41 |
Obsolete | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
|
ON Semiconductor |
DIODE GEN PURP 50V 1A DO41 |
Obsolete | Standard | 50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
Obsolete | Standard | 100V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
|
ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
Obsolete | Standard | 200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |