HGTP10N120BN ON Semiconductor Distributor
| Manufacturer Part Number | HGTP10N120BN |
|---|---|
| Manufacturer / Brand | ON Semiconductor |
| Available Quantity | 196610 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | IGBT 1200V 35A 298W TO220AB |
| Product Category | Transistors - IGBTs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | HGTP10N120BN.pdf |
Please fill the below inquiry form, we will reply you the quotation for HGTP10N120BN within 24 hours.
- Part Number
- HGTP10N120BN
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Not For New Designs
- IGBT Type
- NPT
- Voltage - Collector Emitter Breakdown (Max)
- 1200V
- Current - Collector (Ic) (Max)
- 35A
- Current - Collector Pulsed (Icm)
- 80A
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 10A
- Power - Max
- 298W
- Switching Energy
- 320µJ (on), 800µJ (off)
- Input Type
- Standard
- Gate Charge
- 100nC
- Td (on/off) @ 25°C
- 23ns/165ns
- Test Condition
- 960V, 10A, 10 Ohm, 15V
- Reverse Recovery Time (trr)
-
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Supplier Device Package
- TO-220AB
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- HGTP10N120BN
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