Manufacturer Part NumberNTMD6601NR2G
Manufacturer / BrandON Semiconductor
Available Quantity51320 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET 2N-CH 80V 1.1A 8SOIC
Product CategoryTransistors - FETs, MOSFETs - Arrays
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download NTMD6601NR2G.pdf

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Part Number
NTMD6601NR2G
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Obsolete
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
1.1A
Rds On (Max) @ Id, Vgs
215 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 25V
Power - Max
600mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Weight
Contact us
Application
Email for details
Replacement Part
NTMD6601NR2G

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