Manufacturer Part NumberHGT1S10N120BNST
Manufacturer / BrandON Semiconductor
Available Quantity136140 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionIGBT 1200V 35A 298W TO263AB
Product CategoryTransistors - IGBTs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download HGT1S10N120BNST.pdf

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Part Number
HGT1S10N120BNST
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
35A
Current - Collector Pulsed (Icm)
80A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298W
Switching Energy
320µJ (on), 800µJ (off)
Input Type
Standard
Gate Charge
100nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB
Weight
Contact us
Application
Email for details
Replacement Part
HGT1S10N120BNST

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